Dip problem of the electron mobility on a thin helium film
نویسندگان
چکیده
Electrons floating above liquid helium form an ideal two-dimensional system with an extremely high mobility. However, the mobility can change substantially when decreasing the thickness of the helium film from bulk to a thin film of a few hundred Å. Furthermore it is observed that for certain film thicknesses there is a pronounced dip in the mobility. We present theoretical investigations and measurements concerning this problem. Taking into account the roughness of the substrate, which supports the helium film, we find theoretically a discontinuity in the chemical potential of the electrons which results in a diplike behavior in the electron current and hence in the electron mobility. This scenario is supported by direct measurements of the electron current on substrates with different roughness and at different electron densities.
منابع مشابه
Interface optimization using diindenoperylene for C60 thin film transistors with high electron mobility and stability
C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (111) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm V 1 s 1 to 2.92 cm V 1 s 1 by inserting the template-DIP layer. M...
متن کاملSurface State Electrons on a Hydrogen Film. 2. Influence of Adsorbed Helium Films
We have investigated the conductivity of surface state electrons on liquid 4He films supported by a quench-condensed thin solid hydrogen substrate. A pronounced dip in the ac-conductivity was observed as the He film thickness reached about 10 layers. This phenomenon was studied at different temperatures (range between 1.6 and 210, electron densities from 0.9 to 19x10S cm -2, frequencies between...
متن کاملLow Temperature Polysilicon Thin-Film Transistors on Flexible Substrates
We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...
متن کاملFabrication of Nb/V co-doped TiO2 thin films and study of structural, optical and photocatalytic properties
In this study, different samples of Niobium and Vanadium co-doped titania thin films (5-10-15 mol% Nb and 5-10-15 mol% V) were prepared via sol−gel dip coating method, using niobium chloride as niobium precursor, ammonium metavanadate as vanadium precursor, and titanium (IV) butoxide (TBT) as titanium precursor. The effects of doping amount on the structural, optical, and photo-catalytic prope...
متن کاملFabrication of Nb/V co-doped TiO2 thin films and study of structural, optical and photocatalytic properties
In this study, different samples of Niobium and Vanadium co-doped titania thin films (5-10-15 mol% Nb and 5-10-15 mol% V) were prepared via sol−gel dip coating method, using niobium chloride as niobium precursor, ammonium metavanadate as vanadium precursor, and titanium (IV) butoxide (TBT) as titanium precursor. The effects of doping amount on the structural, optical, and photo-catalytic prope...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2001